Dependence of Process Damage on GaN Channel Thickness in AlGaNGaN High-electron-mobility Transistors with Back-barrier Layers

Abstract In this study, AlGaN/GaN high-electron-mobility transistor (HEMTs) with 65- and 38-nm channel layers back-barrier were fabricated. The isolation process resulted in damage related to the thickness of layer, which deteriorated properties such as sheet resistance Rsh transconductance gm. These attributed surface oxidation AlGaN barrier, simulation results showed that dependence on trap level density was changed by layer thickness; however, calculated changes smaller than observed changes. range gate lengths we produced, suppression short-channel effect back barrier confirmed, but no significant change observed.